W949D6DB

Standard Self Refresh Mode

W949D6DBHX

低功耗双存取同步动态随机存取内存(Low Power DDR SDRAM); •Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V \n• Data width: x16 \n• Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz \n• Standard Self Refresh Mode \n• PASR、ATCSR、Power Down Mode、DPD \n• Programmable output buffer driver strength \n• Four internal banks for concurrent operation \n• CAS Latency: 2 and 3 \n• Burst Length: 2、4 、8 and 16 \n• Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C) \n• Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver\n• Package:60VFBGA;

This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits\n

W949D6DBHX5E TR

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 60VFBGA

Winbond Electronics

W949D6DBHX5I

Package：60-TFBGA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 60VFBGA

Winbond Electronics

W949D6DBHX5I TR

Package：60-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 60VFBGA

Winbond Electronics

W949D6KB

PowerDownMode