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TW015Z120C

Marking:W015Z120C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=1200V (4)Lowdrain-sourceon-resistance:RDS(ON)=15mΩ(typ.) (5)Lesssusceptiblet

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW015Z65C

Marking:W015Z65C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=650V (4)Lowdrain-sourceon-resistance:RDS(ON)=15mΩ(typ.) (5)Lesssusceptibleto

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW027Z65C

Marking:W027Z65C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=650V (4)Lowdrain-sourceon-resistance:RDS(ON)=27mΩ(typ.) (5)Lesssusceptibleto

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW030Z120C

Marking:W030Z120C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=1200V (4)Lowdrain-sourceon-resistance:RDS(ON)=30mΩ(typ.) (5)Lesssusceptiblet

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW045Z120C

Marking:W045Z120C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=1200V (4)Lowdrain-sourceon-resistance:RDS(ON)=45mΩ(typ.) (5)Lesssusceptiblet

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW048Z65C

Marking:W048Z65C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=650V (4)Lowdrain-sourceon-resistance:RDS(ON)=48mΩ(typ.) (5)Lesssusceptibleto

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW060Z120C

Marking:W060Z120C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=1200V (4)Lowdrain-sourceon-resistance:RDS(ON)=60mΩ(typ.) (5)Lesssusceptiblet

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TW083Z65C

Marking:W083Z65C;Package:TO-247-4L;MOSFETs Silicon Carbide N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=650V (4)Lowdrain-sourceon-resistance:RDS(ON)=83mΩ(typ.) (5)Lesssusceptibleto

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

ESD5302F-3/TR

Marking:W02A;Package:SOT-23;2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors

WILLSEMIWill Semiconductor Co.,Ltd.Shanghai

韦尔股份上海韦尔半导体股份有限公司

ESD5302F-3SLASHTR

Marking:W02A;Package:SOT-23;2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors

WILLSEMIWill Semiconductor Co.,Ltd.Shanghai

韦尔股份上海韦尔半导体股份有限公司

详细参数

  • 型号:

    W0

  • 制造商:

    TAITIEN

供应商型号品牌批号封装库存备注价格
JXND
24+
NA/
33250
原厂直销,现货供应,账期支持!
询价
TOSHIBA/东芝
22+
SOT-23
25000
只有原装原装,支持BOM配单
询价
YXYBDT/一芯源
20+21+
SOD-323
60000
原.现货
询价
TOSHIBA/东芝
23+
SOT553
15000
全新原装现货,价格优势
询价
XX
23+
SOT-235
50000
全新原装正品现货,支持订货
询价
-
SOP8
6698
询价
SAMSUNG/三星
20+
BGA
19570
原装优势主营型号-可开原型号增税票
询价
TI/德州仪器
2447
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
1307+
BGA
8756
原装/现货
询价
SAMSUNG/三星
21+
QFP
7087
原装现货假一赔十
询价
更多W0供应商 更新时间2025-5-16 23:00:00