OMNIFET II fully autoprotected Power MOSFET

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STMICROELECTRONICS

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OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

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STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

文件：287.49 Kbytes 页数：22 Pages

STMICROELECTRONICS

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OMNIFET II全自动保护功率MOSFET

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.\n\n Built-in thermal shu • AEC-Q100 qualified \n• ECOPACK: lead free and RoHS compliant \n• Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Powe;

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OMNIFET II fully autoprotected Power MOSFET

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门驱动器 OMNIFET II VIPower 35mOhm 12A 40V

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：MOSFET 2N-CH 40V 3.5A 8-SOIC

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体