首页 >VNS3NV04D-E>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
VNS3NV04D-E | OMNIFET II fully autoprotected Power MOSFET Description TheVNS3NV04D-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtinth | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
VNS3NV04D-E | 包装:管件 封装/外壳:8-SOIC(0.154",3.90mm 宽) 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS3NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications.Builtinther | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNN3NV04,VNS3NV04,VND3NV04VND3NV04-1,aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50kHzapplications. Features ■Linearcurrentlimitation ■Thermalshutdown ■Shortcircuit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS3NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications.Builtinther | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS3NV04D-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtinth | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS |
产品属性
- 产品编号:
VNS3NV04D-E
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 配电开关,负载驱动器
- 系列:
OMNIFET II™, VIPower™
- 包装:
管件
- 开关类型:
通用
- 输出数:
2
- 比率 - 输入:
1:1
- 输出配置:
低端
- 输出类型:
N 通道
- 接口:
开/关
- 电压 - 负载:
36V(最大)
- 电压 - 供电 (Vcc/Vdd):
不需要
- 电流 - 输出(最大值):
3.5A
- 导通电阻(典型值):
120 毫欧(最大)
- 输入类型:
非反相
- 故障保护:
限流(固定),超温,过压
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 供应商器件封装:
8-SOIC
- 封装/外壳:
8-SOIC(0.154",3.90mm 宽)
- 描述:
IC PWR DRIVER N-CHANNEL 1
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2021+ |
23+ |
16500 |
代理授权直销,原装现货,假一罚十,长期稳定供应,特 |
询价 | ||
ST |
19+/20+ |
SOP-8 |
7765 |
询价 | |||
ST |
2017+ |
SOP-8 |
54789 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ST |
22+ |
SOP8 |
5800 |
原装现货,可开13%税票 |
询价 | ||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
ST |
22+23+ |
SOP-8 |
26966 |
绝对原装正品全新进口深圳现货 |
询价 | ||
23+ |
N/A |
30650 |
正品授权货源可靠 |
询价 | |||
STMicroelectronics |
23+ |
8-SO |
66800 |
进口原装现货假一罚十 |
询价 | ||
ST/意法 |
20+ |
SOP-8 |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
23+ |
SOP-8 |
10500 |
全新原装现货,假一赔十 |
询价 |
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