VNS3NV04技术资料参数供应价格意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
VNS3NV04	文件：418.58 Kbytes Page：21 Pages	?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit 文件：418.58 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04	文件：359.9 Kbytes Page：26 Pages	OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po 文件：359.9 Kbytes 页数：26 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04	文件：493.65 Kbytes Page：26 Pages	OMNIFET II fully autoprotected Power MOSFET 文件：493.65 Kbytes 页数：26 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV0413TR	文件：359.9 Kbytes Page：26 Pages	OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po 文件：359.9 Kbytes 页数：26 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04D	文件：241.6 Kbytes Page：14 Pages	?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther 文件：241.6 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04D-E	文件：357.06 Kbytes Page：21 Pages	OMNIFET II fully autoprotected Power MOSFET Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th 文件：357.06 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04DP-E	文件：382.89 Kbytes Page：21 Pages	Automotive OMNIFET II fully autoprotected Power MOSFET Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t 文件：382.89 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04DP-E_V01	文件：382.89 Kbytes Page：21 Pages	Automotive OMNIFET II fully autoprotected Power MOSFET Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t 文件：382.89 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04DPTR-E	文件：382.89 Kbytes Page：21 Pages	Automotive OMNIFET II fully autoprotected Power MOSFET Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t 文件：382.89 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VNS3NV04DTR-E	文件：357.06 Kbytes Page：21 Pages	OMNIFET II fully autoprotected Power MOSFET Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th 文件：357.06 Kbytes 页数：21 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Technology：
M0-3
RDS(on)_typ(mΩ)：
120
General Description：
OMNIFET II fully autoprotected Power MOSFET
Marketing Status：
Active
Package：
SO-8
RoHS Compliance Grade：
Ecopack2
Clamp Voltage_typ(V)：
45
Drain Current Limit_typ(A)：
5

供应商	型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	VNS3NV04	ST	25+		33	全新原装!优势库存热卖中!	询价
深圳市壹芯创科技有限公司	VNS3NV04	ST	23+		12500	工厂库存实单可谈	询价
柒号芯城电子商务(深圳)有限公司	VNS3NV04	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市一线半导体有限公司	VNS3NV04	ST	24+	39SOP8	55204		询价
深圳市振宏微科技有限公司	VNS3NV04	ST	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价
深圳市正纳电子有限公司	VNS3NV04	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
贸泽芯城（深圳）电子科技有限公司	VNS3NV04	ST/意法	23+	SOP8	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市赛特兴科技有限公司	VNS3NV04	ST	23+	SOP8	16900	正规渠道,只有原装!	询价
深圳市万佳诚业科技有限公司	VNS3NV04	ST(意法)	23+		15000	专业帮助客户找货配单,诚信可靠!	询价
深圳市腾亿芯科技有限公司	VNS3NV04	ST	25+	SOP8	16900	原装，请咨询	询价

更多VNS3NV04供应商更新时间2026-1-31 12:27:00

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