Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Available in tape and reel • Fast switching • Ease of paralleling

文件：1.45099 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • Power Factor Corre

文件：739.39 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Available in Tape and Reel • Fast Switching • Ease of Paralleling

文件：1.73446 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：878.44 Kbytes 页数：11 Pages

VBSEMI

微碧半导体

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow

文件：915.04 Kbytes 页数：12 Pages

VBSEMI

微碧半导体

N-Channel 500V (D -S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Computing - PC silver box / ATX power supplies • Lighting - Two stage LED lighting • Consumer elect

文件：849.95 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 500-V (D-S) Super Junction MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Computing - PC silver box / ATX power supplies

文件：901 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 500V (D -S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：847.07 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 500V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：813.06 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：853.14 Kbytes 页数：11 Pages

VBSEMI

微碧半导体