VBE1602K数据表ic资料原装现货微碧半导体-114ic电子网

首页 >VBE1602K>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
VBE1602K	文件：853.14 Kbytes Page：11 Pages	Power MOSFET FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 文件：853.14 Kbytes 页数：11 Pages	VBSEMI 微碧半导体	VBSEMI
VBF1602K	文件：853.14 Kbytes Page：11 Pages	Power MOSFET FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 文件：853.14 Kbytes 页数：11 Pages	VBSEMI 微碧半导体	VBSEMI
VBM1602	文件：424.98 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested 文件：424.98 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
VBM1602K	文件：853.14 Kbytes Page：11 Pages	Power MOSFET FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 文件：853.14 Kbytes 页数：11 Pages	VBSEMI 微碧半导体	VBSEMI

更多VBE1602K供应商更新时间2025-10-11 14:02:00