N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

文件：424.98 Kbytes 页数：7 Pages

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微碧半导体

Power MOSFET

FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：853.14 Kbytes 页数：11 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：853.14 Kbytes 页数：11 Pages

VBSEMI

微碧半导体

16CH x 2 Lines 1/16Duty,1/5Bias LCD

[Wincom Electronics] 16CH x 2 Lines 1/16Duty, 1/5Bias LCD

文件：118.83 Kbytes 页数：1 Pages

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16x2 Characters

1. 5x7 dots with cursor 2. Built in Controller (HD44780 OR Equivalent) 3. +5V Power Supply (Also available for +3V) 4. 1/16 Duty Cycle

文件：228.65 Kbytes 页数：1 Pages

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