N-Channel 900V(D-S) Super Junction Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.41933 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 900V(D-S) Super Junction Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.42225 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 900V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：553.42 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 900V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：774.08 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

文件：61.38 Kbytes 页数：1 Pages

IXYS

艾赛斯

Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

文件：61.38 Kbytes 页数：1 Pages

IXYS

艾赛斯

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters

文件：640.87 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters

文件：686.61 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters

文件：686.61 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 100-V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET

文件：619.12 Kbytes 页数：7 Pages

VBSEMI

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