Single Phase Rectifier Bridge

Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery

文件：184.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：857.56 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.12491 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements

文件：1.41656 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements

文件：1.40472 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：865.83 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 700 V (D-S) Supper Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：784.38 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：758.43 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：743.74 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 700V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.04579 Mbytes 页数：12 Pages

VBSEMI

微碧半导体