N-Channel 700 V (D-S) Supper Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：784.38 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：559.66 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：865.83 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

VISHAY/威世
2-SMD

VISHAY/威世

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