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VBE185R04

Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件:1.14716 Mbytes 页数:11 Pages

VBSEMI

微碧半导体

VBE185R05

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件:1.45245 Mbytes 页数:10 Pages

VBSEMI

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VBE185R06

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements

文件:1.413 Mbytes 页数:10 Pages

VBSEMI

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VBE18R02S

N-Channel 800V(D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件:591.52 Kbytes 页数:7 Pages

VBSEMI

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VBE18R05S

N-Channel 800V (D-S) Super Junction Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件:1.651 Mbytes 页数:11 Pages

VBSEMI

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VBE18R07S

N-Channel 800V(D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件:1.91259 Mbytes 页数:11 Pages

VBSEMI

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VBE18R09S

N-Channel 800V(D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件:660.52 Kbytes 页数:7 Pages

VBSEMI

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VBE18R11S

N-Channel 800V(D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件:639.09 Kbytes 页数:7 Pages

VBSEMI

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VBE195R03

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件:917.08 Kbytes 页数:10 Pages

VBSEMI

微碧半导体

VBE19R02S

N-Channel 900V(D-S) Super Junction Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件:1.43923 Mbytes 页数:9 Pages

VBSEMI

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技术参数

  • Average Continuous Current Rating:

    100

  • Case temperature:

    85

  • Maximum Surge Current [Diode] (A):

    600

  • maximum virtual junction temperature:

    150

  • Thermal resistance [junction-case] (K/W):

    0.8

  • Thermal Resistance caseheatsink KW:

    0.2

  • trr typ ns:

    35

  • IRM:

    8

  • Maximum rate of rise in current over time.:

    200

  • Sample Request:

    No

  • Package Type:

    ECO-PAC2

供应商型号品牌批号封装库存备注价格
IXYS
10+
主营模块
85
原装正品,公司正品供应
询价
IXYS
24+
ECO-PAC1
48
询价
IXYS
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
IXYS
25+
N/A
90000
一级代理商进口原装现货、价格合理
询价
IXYS
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
IXYS
21+
V1A-PAK
1000
主打产品价格优惠.全新原装正品
询价
25+
KBPC-4
3000
全新原装现货,价格优势
询价
IXYS
1931+
N/A
314
加我qq或微信,了解更多详细信息,体验一站式购物
询价
VBsemi(台湾微碧)
2447
TO-252
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IXYS
25+
ECO-PAC1
326
就找我吧!--邀您体验愉快问购元件!
询价
更多VBE供应商 更新时间2026-1-28 9:04:00