VB30M120C-M3

Trench MOS Schottky technology

VB30M120C-M3SLASHI

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C

VB30M120C-M3/I

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB30M120C-M3/I

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：30A 120V TO-263 TRENCH SKY RECT

Vishay General Semiconductor - Diodes Division

VF30M120C-M3

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VF30M120C-M3

TrenchMOSSchottkytechnology

VI30M120C-M3

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier