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V10P10HM3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM3/86A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM3/87A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM386A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM387A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM3SLASH86A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10HM3SLASH87A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10-M3

THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger

文件:1.5364 Mbytes 页数:3 Pages

THINKISEMI

思祁半导体

V10P10-M3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10P10-M3/86A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件:111.06 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    V10P10

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Vishay(威世)
2021/2022+
标准封装
6500
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
VISHAY/威世
23+
TO-277A(SMPC)
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Vishay(威世)
25+
N/A
8800
公司只做原装,详情请咨询
询价
Vishay(威世)
2511
N/A
11800
电子元器件采购降本 30%!原厂直采,砍掉中间差价
询价
Vishay(威世)
23+
N/A
11800
询价
Vishay
24+
NA
3112
进口原装正品优势供应
询价
VISHAY
25+23+
TO-227A
18800
绝对原装正品全新进口深圳现货
询价
VISHAY
25+
SMPC(TO-277A)
90000
一级代理商进口原装现货、价格合理
询价
更多V10P10供应商 更新时间2026-4-18 13:48:00