V10P10HM3SLASH86A中文资料威世数据手册PDF规格书

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.453 V at IF = 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward volatge drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

•Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection

applications.