MOS FIELD EFFECT TRANSISTOR

Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.6 mΩ MAX. (VGS = 10 V, ID = 34 A) • 4.5V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free

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MOS FIELD EFFECT TRANSISTOR

Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.6 mΩ MAX. (VGS = 10 V, ID = 34 A) • 4.5V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free

文件：146.05 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.6 mΩ MAX. (VGS = 10 V, ID = 34 A) • 4.5V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free

文件：146.05 Kbytes 页数：8 Pages

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Nch Single Power Mosfet 30V 34A 2.6Mohm 8Pin HVSON (3333)

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • VDSS = 30 V (TA = 25°C)\n• Low on-state resistance RDS(on) = 2.6 mΩ MAX. (VGS = 10 V, ID = 34 A)\n• 4.5V Gate-drive available\n• Small surface mount package (8-pin HVSON (3333))\n• Pb-free, Halogen Free\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA2822T1L Dat;

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