UPA1730

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1730isP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-resistance RDS(on)1=9.5mΩMAX.(VGS=–10V,ID=–6.5A) RDS(on)2=13.5mΩMAX.(VGS=–4.5

UPA1730

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE

UPA1730G

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION TheµPA1730isP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-resistance RDS(on)1=9.5mΩMAX.(VGS=–10V,ID=–6.5A) RDS(on)2=13.5mΩMAX.(VGS=–4.5

UPA1730G

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE

UPA1730TP

SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheµPA1730TPwhichhasaheatspreaderisaP-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=9.5mΩMAX.(VGS=–10V,ID=–6.5A)

UPA1730TP

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET FEATURES •Lowon-stateresistance RDS(on)1=9.5mΩMAX.(VGS=–10V,ID=–6.5A) RDS(on)2=13.5mΩMAX.(VGS=–4.5V,ID=–6.5A) RDS(on)3=15.0mΩMAX.(VGS=–4.0V,ID=–6.5A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode

UPA1730G

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE;