丝印：TW1；Package：SOT23；Schottky Barrier Diode Silicon Epitaxial

文件：195.05 Kbytes 页数：6 Pages

TOSHIBA

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丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

文件：799.11 Kbytes 页数：12 Pages

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东芝

丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

文件：799.11 Kbytes 页数：12 Pages

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东芝

丝印：W107Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ.) (5) Less susceptible t

文件：961.69 Kbytes 页数：12 Pages

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东芝

丝印：W140Z120C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 mΩ (typ.) (5) Less susceptible

文件：631.9 Kbytes 页数：12 Pages

TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

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东芝

SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 18V · Low On-Resistance APPLICATIONS · DC-DC Converters · Solar Inverters, UPS · Motor Drives

文件：352.25 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

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东芝

400-2700 MHz Linear Power Amplifier

Applications  UHF television  TETRA radios  PCS, DCS, 2.5G, 3G handsets  ISM band transmitters  WCS fixed wireless  802.16 WiMAX  3GPP LTE Features  Wideband frequency range: 400 to 2700 MHz  Low Noise Figure: as low as 3.6 dB  High linearity: OIP3 up to +42.5 dBm  OP1dB =

文件：1.22711 Mbytes 页数：14 Pages

SKYWORKS

思佳讯

100 – 1000 MHz; Ultra Wideband Variable Gain Amplifier

Description Skyworks SKY65142 is an ultra-wideband Variable Gain Amplifier (VGA) in a small footprint module. The module contains a Variable Voltage Attenuator with Gain control range of over 20 dB. The device is internally matched for 50 Ohms on all RF ports. The VGA maintains very linear perfo

文件：633.75 Kbytes 页数：12 Pages

SKYWORKS

思佳讯