TW123V65C芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TW123V65C	文件：799.11 Kbytes Page：12 Pages	丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t 文件：799.11 Kbytes 页数：12 Pages	TOSHIBA 东芝	TOSHIBA
TW123V65C	文件：799.11 Kbytes Page：12 Pages	丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t 文件：799.11 Kbytes 页数：12 Pages	TOSHIBA 东芝	TOSHIBA

更多TW123V65C供应商更新时间2025-9-21 16:01:00