丝印：TW1；Package：SOT23；Schottky Barrier Diode Silicon Epitaxial

文件：195.05 Kbytes 页数：6 Pages

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东芝

丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

文件：799.11 Kbytes 页数：12 Pages

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东芝

丝印：TW123V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 123 mΩ (typ.) (5) Less susceptible t

文件：799.11 Kbytes 页数：12 Pages

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东芝

丝印：W107Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ.) (5) Less susceptible t

文件：961.69 Kbytes 页数：12 Pages

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东芝

丝印：W140Z120C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 mΩ (typ.) (5) Less susceptible

文件：631.9 Kbytes 页数：12 Pages

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东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

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东芝

SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 18V · Low On-Resistance APPLICATIONS · DC-DC Converters · Solar Inverters, UPS · Motor Drives

文件：352.25 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

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Wirewound Spindle Operated Potentiometer

Key Features ■ Wirewound Element ■ Proven Reliability ■ Excellent Linearity ■ 1 W Rating at 40°C ■ Robust Construction ■ Custom Designs Possible

文件：72.52 Kbytes 页数：1 Pages

TEC

泰科电子

400-2700 MHz Linear Power Amplifier

Applications  UHF television  TETRA radios  PCS, DCS, 2.5G, 3G handsets  ISM band transmitters  WCS fixed wireless  802.16 WiMAX  3GPP LTE Features  Wideband frequency range: 400 to 2700 MHz  Low Noise Figure: as low as 3.6 dB  High linearity: OIP3 up to +42.5 dBm  OP1dB =

文件：1.22711 Mbytes 页数：14 Pages

SKYWORKS

思佳讯