MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

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SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 18V · Low On-Resistance APPLICATIONS · DC-DC Converters · Solar Inverters, UPS · Motor Drives

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ISC

无锡固电

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

TOSHIBA

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Power SiC MOSFETs

Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available

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