丝印：W027U65C；Package：TOLL；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 27 mΩ (typ.) (5) Less susceptible to

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TOSHIBA

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Power SiC MOSFETs

Application Scope：Switching regulators\n\nPolarity：N-ch\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

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TECHWEII
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TECHWEII

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