TORQUE PRODUCTS

文件：3.50277 Mbytes 页数：32 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 18V · Low On-Resistance APPLICATIONS · DC-DC Converters · Solar Inverters, UPS · Motor Drives

文件：352.25 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：848.03 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：W107Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ.) (5) Less susceptible t

文件：961.69 Kbytes 页数：12 Pages

TOSHIBA

东芝

Topstek Current Transducers

文件：122.22 Kbytes 页数：2 Pages

TOPSTEK

Embedded GPS L1 Antenna

文件：196.88 Kbytes 页数：2 Pages

TALLYSMAN

Embedded GPS L1 Antenna

文件：196.88 Kbytes 页数：2 Pages

TALLYSMAN

Low Current Embedded GPS Antenna

文件：356.21 Kbytes 页数：2 Pages

TALLYSMAN

Power SiC MOSFETs

Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝