丝印：TW031V65C；Package：DFN8x8；MOSFETs Silicon Carbide N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 31 mΩ (typ.) (5) Less susceptible to

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TOSHIBA

东芝

Power SiC MOSFETs

Application Scope：Switching regulators\n\nPolarity：N-ch\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

QFP128

TWCHWELL

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TQFP-128

TECHWELL

上传：深圳市煦洪科技有限公司

QFP128

TECHWELL

上传：深圳庞田科技有限公司