丝印：TTC；Package：SMA；TVS Diodes Surface Mount > 400W > SZ1SMA Series

文件：794.06 Kbytes 页数：7 Pages

Littelfuse

力特

丝印：C004B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

(1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: C ob= 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.)

文件：210.53 Kbytes 页数：7 Pages

TOSHIBA

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丝印：C008；Package：PW-Mold2；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters Features (1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V (2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A) (3) Excellent switching times: tf = 0.1 μs (typ.)

文件：169.48 Kbytes 页数：7 Pages

TOSHIBA

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丝印：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Audio-Frequency Amplifiers Features (1) High collector voltage : VCEO = 230 V (min) (2) Small collector output capacitance : Cob = 20 pF (typ.) (3) High transition frequency : fT = 100 MHz (typ.) (4) Complementary to TTA006B

文件：272.99 Kbytes 页数：6 Pages

TOSHIBA

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丝印：4R；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Voltage Switching • LCD Backlighting Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)

文件：175.73 Kbytes 页数：7 Pages

TOSHIBA

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丝印：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 μs (typ.),

文件：171.05 Kbytes 页数：6 Pages

TOSHIBA

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丝印：C015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1A) (4) Complementary to TTA008B

文件：218.85 Kbytes 页数：7 Pages

TOSHIBA

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丝印：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.)

文件：311.45 Kbytes 页数：6 Pages

TOSHIBA

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丝印：C017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A)

文件：487.1 Kbytes 页数：7 Pages

TOSHIBA

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丝印：4U；Package：PW-Mini；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Voltage Switching Features (1) High collector voltage: VCEO = 500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = 10 V, IC = 20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = 0.3 V (max) (IC = 20 mA, IB = 2 mA)

文件：291.78 Kbytes 页数：6 Pages

TOSHIBA

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