N-Channel 650 V (D-S) MOSFET

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VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件：1.08795 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

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TSC

台湾半导体

N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

文件：211.16 Kbytes 页数：3 Pages

TSC

台湾半导体

N-Channel MOSFET

600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 8.5 nC (Typ.) □ BVDSS=600V,ID=2A □ Lower RDS(on) : 5Ω (Max) @VG=10V □ 100 Avalanche Tested

文件：715.59 Kbytes 页数：8 Pages

WISDOM