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TSM2N60CH中文资料台湾半导体数据手册PDF规格书

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厂商型号

TSM2N60CH

功能描述

N CHANNEL POWER ENHANCEMENT MODE MOSFET

文件大小

211.16 Kbytes

页面数量

3

生产厂商

TSC

中文名称

台湾半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-11-28 14:08:00

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TSM2N60CH规格书详情

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients

特性 Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

产品属性

  • 型号:

    TSM2N60CH

  • 功能描述:

    MOSFET 600V 2Amp N channel MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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