TSM2N60CH中文资料台湾半导体数据手册PDF规格书
TSM2N60CH规格书详情
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode.
产品属性
- 型号：
TSM2N60CH
- 功能描述：
MOSFET 600V 2Amp N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TAIWAN SEMONDUCTOR |
24+ |
NA/ |
13318 |
原厂直销,现货供应,账期支持! |
询价 | ||
TSC/台湾半导体 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
TAIWANSEMI |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
TS |
23+ |
TO252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
TOSHIBA |
22+ |
TO-251 |
3000 |
原装正品,支持实单 |
询价 | ||
TSC |
24+ |
TO251 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
TS |
2018+ |
TO251 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
TW |
23+ |
SOT-252 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SEMTECH |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
询价 | ||
TSC/台半 |
TO-251 |
8422 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
