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TSM2N60

N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

文件:211.16 Kbytes 页数:3 Pages

TSC

台湾半导体

TSM2N60

600V N-Channel Power MOSFET

文件:459.79 Kbytes 页数:8 Pages

TSC

台湾半导体

TSM2N60

600V N-Channel Power MOSFET

General Description\nThe TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design ● Robust high voltage termination\n● Avalanche energy specified\n● Diode is characterized for use in bridge circuits\n● Source to Drain diode recovery time comparable to a discrete fast recovery diode.;

TSC

台湾半导体

TSM2N60CH

N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

文件:211.16 Kbytes 页数:3 Pages

TSC

台湾半导体

TSM2N60CP

N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

文件:211.16 Kbytes 页数:3 Pages

TSC

台湾半导体

TSM2N60CPRO

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件:1.32278 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

TSM2N60S

600V N-Channel Power MOSFET

General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件:328.03 Kbytes 页数:8 Pages

TSC

台湾半导体

TSM2N60SCWRP

600V N-Channel Power MOSFET

General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件:328.03 Kbytes 页数:8 Pages

TSC

台湾半导体

TSM2N60_07

600V N-Channel Power MOSFET

文件:459.79 Kbytes 页数:8 Pages

TSC

台湾半导体

TSM2N60_1

N-Channel Power Enhancement Mode MOSFET

文件:157.8 Kbytes 页数:4 Pages

TSC

台湾半导体

技术参数

  • Type:

    N-Channel

  • Technology:

    Planar

  • Configuration:

    Single

  • Status:

    NRND

  • Replacement:

    TSM2NB60CH

  • AEC-Q:

    No

  • VDS (V):

    600

  • VGS ±(V):

    30

  • ID Max. (A):

    2

  • TJ Max. (°C):

    150

  • RDS(ON) @ 10V Max. (mΩ):

    4000

  • RDS(ON) @ 10V Typ. (mΩ):

    3200

  • Qg (nC) @ 10V:

    9.5

  • Qgd (nC):

    3.9

  • Qgs (nC):

    2.1

  • Ciss (pF):

    362

  • Coss (pF):

    40

  • Crss (pF):

    7.2

  • VGS(th) Max. (V):

    5

  • VGS(th) Min. (V):

    3

供应商型号品牌批号封装库存备注价格
原装TSC
24+
TO-252
5000
只做原装公司现货
询价
原装TSC
23+
TO-252
50000
全新原装正品现货,支持订货
询价
原装TSC
24+
NA/
3545
原装现货,当天可交货,原型号开票
询价
原装TSC
24+
TO-252
60000
全新原装现货
询价
TW
23+
SOT-252
8650
受权代理!全新原装现货特价热卖!
询价
TSC
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TAIWAN
25+
SOT-223
3675
就找我吧!--邀您体验愉快问购元件!
询价
TSC
23+
TO251
50000
全新原装正品现货,支持订货
询价
TSC America Inc.
22+
TO2614 TO261AA
9000
原厂渠道,现货配单
询价
TS
23+
TO252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多TSM2N60供应商 更新时间2025-10-11 10:20:00