TSM2N60S中文资料PDF规格书
TSM2N60S规格书详情
General Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a discrete fast recovery diode
产品属性
- 型号：
TSM2N60S
- 功能描述：
MOSFET 600V 2Amp N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
16+ |
SOT-223 |
79 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
TS |
06+07+ |
TO-92 |
2000 |
询价 | |||
TSC |
SOT-223 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
TSC |
21+ |
SOT-223 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
TSC |
23+ |
TO-92 |
4455 |
原厂原装正品 |
询价 | ||
TSM |
1535+ |
211 |
询价 | ||||
TSC America Inc. |
22+ |
TO2614 TO261AA |
9000 |
原厂渠道,现货配单 |
询价 | ||
TS |
2023+ |
TO-92 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TSC |
2023+ |
SOT-223 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
VB |
2019 |
TO-92 |
55000 |
绝对原装正品假一罚十! |
询价 |
