N CHANNEL POWER ENHANCEMENT MODE MOSFET

General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des

文件：211.16 Kbytes 页数：3 Pages

TSC

台湾半导体

N-Channel Power Enhancement Mode MOSFET

文件：157.8 Kbytes 页数：4 Pages

TSC

台湾半导体

600V N-Channel Power MOSFET

文件：459.79 Kbytes 页数：8 Pages

TSC

台湾半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.32278 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

600V N-Channel Power MOSFET

文件：348.32 Kbytes 页数：8 Pages

TSC

台湾半导体