TSD2N60MZ数据表ic资料原装现货微碧半导体-114ic电子网

首页 >TSD2N60MZ>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
TSD2N60MZ	文件：1.08795 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.08795 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
TSM2N60	文件：211.16 Kbytes Page：3 Pages	N CHANNEL POWER ENHANCEMENT MODE MOSFET General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des 文件：211.16 Kbytes 页数：3 Pages	TSC 台湾半导体	TSC
TSM2N60	文件：459.79 Kbytes Page：8 Pages	600V N-Channel Power MOSFET 文件：459.79 Kbytes 页数：8 Pages	TSC 台湾半导体	TSC
TSM2N60CH	文件：211.16 Kbytes Page：3 Pages	N CHANNEL POWER ENHANCEMENT MODE MOSFET General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient des 文件：211.16 Kbytes 页数：3 Pages	TSC 台湾半导体	TSC

更多TSD2N60MZ供应商更新时间2026-1-23 14:02:00