TRS6A65C

SiC Schottky Barrier Diode

ITK6A65W

iscN-ChannelMOSFETTransistor

K6A65D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.95Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK6A65D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.95Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK6A65D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK6A65D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.11Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK6A65W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.85Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.18mA)

TK6A65W

iscN-ChannelMOSFETTransistor

TRS6A65F

SiCSchottkyBarrierDiode