TRS6E65F

Marking：S6E65F；Package：TO-220-2L；SiC Schottky Barrier Diode

TRS6E65F,S1Q

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DODE SCHOTTKY 650V TO220

Toshiba Semiconductor and Storage

TRS6E65C

SiCSchottkyBarrierDiode

TRS6E65H

SiCSchottkyBarrierDiode

FEATURES ·LowForwardVoltage ·LowReverseCurrent ·PositiveTemperatureCoefficient APPLICATIONS ·SolarInverter ·PowerFactorCorrection ·DC-DCConverters ·UninterruptiblePowerSupplies

TRS6E65H

SiCSchottkyBarrierDiode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.2V(typ.) (3)Lowtotalcapacitivecharge:Qc=17nC(typ.) (4)Lowreversecurrent:IR=1.1μA(typ.