SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\nFeature：Chip design of 2nd generation.\nNumber of Circuits：1\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：Korea

Toshiba

东芝

丝印：TRS6A65F；Package：TO-220F-2L；SiC Schottky Barrier Diode

文件：277.13 Kbytes 页数：6 Pages

TOSHIBA

东芝

Package：TO-220-2 整包；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PB-F DIODE TO-220-2L V=650 IF=6A

Toshiba Semiconductor and Storage

isc N-Channel MOSFET Transistor

文件：288.88 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：218.39 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：218.39 Kbytes 页数：6 Pages

TOSHIBA

东芝