TRS8A65F

Marking：TRS8A65F；Package：TO-220F-2L；SiC Schottky Barrier Diode

TRS8A65F,S1Q

Package：TO-220-2 整包；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PB-F DIODE TO-220-2L V=650 IF=8A

Toshiba Semiconductor and Storage

ITK8A65W

iscN-ChannelMOSFETTransistor

K8A65D

N-Channel650V(D-S)PowerMOSFET

TK8A65D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK8A65D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.7Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK8A65D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.84Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK8A65W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.53Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.3mA)

TK8A65W

iscN-ChannelMOSFETTransistor

TRS8A65C

SiCSchottkyBarrierDiode