丝印：TRS8V65H；Package：DFN8x8；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 μA (typ.

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TOSHIBA

东芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

SOP

TI

德州仪器

上传：深圳市龙腾翼电子科技有限公司

QFP128

REALTEK

瑞昱

上传：深圳市龙腾翼电子科技有限公司

CDSO16

VISHAY/威世

上传：深圳市澳亿芯电子科技有限公司