TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：2.52844 Mbytes 页数：52 Pages

TI

德州仪器

TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：3.28302 Mbytes 页数：64 Pages

TI

德州仪器

丝印：7H5021PWP；Package：HTSSOP(PWP)；TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：3.41608 Mbytes 页数：70 Pages

TI

德州仪器

TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg – Single-event transient (SET) and single-event

文件：3.53631 Mbytes 页数：70 Pages

TI

德州仪器