TPS7H6015技术资料参数供应商报价德州仪器-114ic电子网

首页 >TPS7H6015>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
TPS7H6015	文件：2.46331 Mbytes Page：47 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.46331 Mbytes 页数：47 Pages	TI 德州仪器	TI
TPS7H6015	文件：2.26321 Mbytes Page：49 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26321 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015	文件：2.26459 Mbytes Page：49 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26459 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015MDCATSEP	文件：2.46331 Mbytes Page：47 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.46331 Mbytes 页数：47 Pages	TI 德州仪器	TI
TPS7H6015MDCATSEP	文件：2.26321 Mbytes Page：49 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26321 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015MDCATSEP	文件：2.26459 Mbytes Page：49 Pages	丝印：7H6015DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26459 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015-SEP	文件：2.26459 Mbytes Page：49 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26459 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015-SEP	文件：2.26321 Mbytes Page：49 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26321 Mbytes 页数：49 Pages	TI 德州仪器	TI
TPS7H6015-SEP	文件：2.46331 Mbytes Page：47 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.46331 Mbytes 页数：47 Pages	TI 德州仪器	TI
TPS7H6015-SP	文件：2.46331 Mbytes Page：47 Pages	TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.46331 Mbytes 页数：47 Pages	TI 德州仪器	TI

技术参数

Power switch：
GaNFET
Input supply voltage (min) (V)：
10
Input supply voltage (max) (V)：
16
Peak output current (A)：
1.3
Operating temperature range (°C)：
-55 to 125
Undervoltage lockout (typ) (V)：
8
Rating：
Space
Propagation delay time (µs)：
0.035
Rise time (ns)：
0.4
Fall time (ns)：
4
Iq (mA)：
0.5
Input threshold：
TTL
Channel input logic：
TTL/PWM
Features：
Dead time control
Driver configuration：
Half bridge
封装：
HTSSOP (DCA)
引脚：
56
尺寸：
113.4 mm² 14 x 8.1

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘扬芯城科技有限公司	TPS7H6015EVM	TI(德州仪器)	2024+	N/A	500000	诚信服务,绝对原装原盘	询价
深圳市煦洪科技有限公司	TPS7N5301RTER	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市腾胜芯科技有限公司	TPS7N5301RTER	TI/德州仪器	25+	原厂封装	10280		询价
深圳市五行云科技有限公司	TPS7N5301RTER	TI/德州仪器	25+	原厂封装	11000		询价
深圳市芯国创科技有限公司	TPS7N5301RTER	TI/德州仪器	25+	原厂封装	10280		询价
深圳市正纳电子有限公司	TPS8	NA	23+	NA	26094	10年以上分销经验原装进口正品,做服务型企业	询价
深圳市河锋鑫科技有限公司	TPS8				80000		询价
深圳市迈锐达科技有限公司	TPS8	TI(德州仪器)	24+	USIP	10000	低于市场价,实单必成,QQ1562321770	询价
深圳市禾兴威科技有限公司	TPS8		23+	NA	6800	原装正品,力挺实单	询价
深圳市中联芯电子有限公司	TPS8		24+		32000	全新原厂原装正品现货,低价出售,实单可谈	询价

更多TPS7H6015供应商更新时间2025-10-4 8:01:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号