TPS7H6003-SP Radiation-Hardness-Assured 200-V, 1.3-A, 2.5-A, Half Bridge GaN FET Gate Driver

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100 krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm2/mg – Single-event tr

文件：1.81073 Mbytes 页数：37 Pages

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TPS7H60x3-SP Radiation-Hardness-Assured 1.3-A, 2.5-A, Half Bridge GaN FET Gate Drivers

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100 krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm2/mg – Single-event tran

文件：2.37069 Mbytes 页数：47 Pages

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德州仪器

TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event transi

文件：2.41584 Mbytes 页数：47 Pages

TI

德州仪器

TPS7H60x3-SP Radiation-Hardness-Assured 1.3-A, 2.5-A, Half Bridge GaN FET Gate Drivers

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100 krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm2/mg – Single-event tran

文件：2.37069 Mbytes 页数：47 Pages

TI

德州仪器

TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event transi

文件：2.41584 Mbytes 页数：47 Pages

TI

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耐辐射、QMLV 200V 半桥 GaN 栅极驱动器

TPS7H60x3-SP 系列耐辐射保障 (RHA) 氮化镓 (GaN) 场效应晶体管 (FET) 栅极驱动器专为高频、高效率应用而设计。该系列包括 TPS7H6003-SP（额定值 200V）、TPS7H6013-SP（额定值 60V）和 TPS7H6023-SP（额定值 22V）。这些驱动器具有可调节死区时间功能、30ns 的小传播延迟，以及 5.5ns 的高侧和低侧匹配。这些器件还包括内部高侧和低侧 LDO，无论电源电压如何，都能确保驱动电压为 5V。TPS7H60x3-SP 驱动器都具有分离栅输出，可独立灵活地调节输出的导通和关断强度。\n\nTPS7H60x3-SP 驱动器具有两种控 • Radiation Performance: \n• Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm 2/mg\n• 1.3-A peak source, 2.5-A peak sink current\n• Single PWM input with adjustable dead time\n• Selectable input interloc;

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