TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.46331 Mbytes 页数：47 Pages

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德州仪器

TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.26321 Mbytes 页数：49 Pages

TI

德州仪器

TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.26459 Mbytes 页数：49 Pages

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德州仪器

耐辐射、200V 半桥 GaN 栅极驱动器

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), TPS7H6015 (60V rating), and the TPS7H6025 (22V Radiation Performance: \n \nRadiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)\n \nSingle-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg\n \nSingle-event transient (SET) and ;

TI

德州仪器