TPH2900ENH芯片代码Marking-114ic电子网

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TPH2900ENH	文件：262.93 Kbytes Page：9 Pages	丝印：TPH2900ENH；Package：SOP；MOSFETs Silicon N-channel MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5 文件：262.93 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TPH2900ENH	文件：262.93 Kbytes Page：9 Pages	丝印：TPH2900ENH；Package：SOP；MOSFETs Silicon N-channel MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5 文件：262.93 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA

更多TPH2900ENH供应商更新时间2025-9-6 14:00:00