丝印：TPH6R003NL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement m

文件：227.14 Kbytes 页数：9 Pages

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丝印：TPH6R003NL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement m

文件：227.14 Kbytes 页数：9 Pages

TOSHIBA

东芝