丝印：TPH2R306NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (5)

文件：395.09 Kbytes 页数：10 Pages

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丝印：TPH2R306NH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 91 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

文件：507.91 Kbytes 页数：9 Pages

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丝印：TPH2R306NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (5)

文件：395.09 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：TPH2R306NH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 91 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

文件：507.91 Kbytes 页数：9 Pages

TOSHIBA

东芝