丝印：TPH4R50ANH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 79 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

文件：488.18 Kbytes 页数：9 Pages

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丝印：TPH4R50ANH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 79 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

文件：488.18 Kbytes 页数：9 Pages

TOSHIBA

东芝