Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 1.8 mΩ (typ.) • High forward transfer admittance: |Yfs| =100 S (typ.) • Low leakage current: IDSS = 10 μA (

文件：159.83 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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N-Channel 30 V (D-S) MOSFET

文件：1.11201 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 45 A \nPower Dissipation PD 2.8 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

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