Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)

Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON)= 10 mΩ(typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS

文件：206.95 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -10 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

东芝

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

瑞萨

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

瑞萨

NECs VARIABLE GAIN AMPLIFIER

文件：720.1 Kbytes 页数：4 Pages

CEL