Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel 40-V (D-S) MOSFET

文件：1.86424 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

N-Channel 40 V (D-S) MOSFET

文件：1.1196 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)

Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 15 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.) • High forward transfer admittan

文件：200.08 Kbytes 页数：7 Pages

TOSHIBA

东芝