TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON)= 3.1 mΩ(typ.) • High forward transfer admittance: |Yfs| = 47 S (typ.) • Low leakage current: IDSS= −10 µA (

文件：168.26 Kbytes 页数：4 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：285.07 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)

Toshiba

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：285.07 Kbytes 页数：7 Pages

TOSHIBA

东芝