TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON)= 8.1 mΩ(typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS= −10 µA (

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TOSHIBA

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：271.99 Kbytes 页数：7 Pages

TOSHIBA

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P-Channel 30-V (D-S) MOSFET

文件：994.81 Kbytes 页数：9 Pages

VBSEMI

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Toshiba

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：271.99 Kbytes 页数：7 Pages

TOSHIBA

东芝