N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：492.97 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

文件：159.93 Kbytes 页数：6 Pages

TOSHIBA

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Silicon N Channel MOS Type (U-MOSIII)

文件：236.45 Kbytes 页数：7 Pages

TOSHIBA

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Power MOSFET (N-ch single VDSS 30V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID 6 A \nPower Dissipation PD 2.2 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

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Silicon N Channel MOS Type (U-MOSIII)

文件：236.45 Kbytes 页数：7 Pages

TOSHIBA

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